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|Title: ||A novel process for preparing PZT thick films|
|Authors: ||Ding, A. L.|
He, X. Y.
Qui, P. S.
Wang, S. J.
Luo, W. G.
Chan, Helen L. W.
|Issue Date: ||2001 |
|Citation: ||ISAF 2000 : proceedings of the 2000 12th IEEE International Symposium on Applications of Ferroelectrics, Honolulu, Hawaii, U.S.A., July 21-August 2, 2000, p. 515-518.|
|Abstract: ||A novel method for preparing PZT thick films
has been developed, which integrated some advantages of common-used processes. Comparing with conventional methods, the present technology can prevent cracks, improve morphologies and properties in films, and increase an achievable thickness. The films show a dense structure and therefor uniform properties, that are
comparable with those in bulk ceramics. PZT film of 3.5µm thickness has a large remanent polarization of 44µC/cm², small coercive field of 50 kV/cm, large dielectric constant of 2000 and small dielectric loss tanδ of 0.04, respectively.|
|Rights: ||© 2001 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.|
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|Type: ||Conference Paper|
|Appears in Collections:||AP Conference Papers & Presentations|
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