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|Title: ||La-doped effect on the ferroelectric properties of Bi₄Ti₃O₁₂-SrBi₄Ti₄O[sub 15] thin film fabricated by pulsed laser deposition|
|Authors: ||Zhu, J. S.|
Lu, X. M.
Qin, H. X.
Chan, Helen L. W.
|Subjects: ||Bismuth compounds|
Ferroelectric thin films
Pulsed laser deposition
Thin film capacitors
|Issue Date: ||1-Nov-2002 |
|Publisher: ||American Institute of Physics|
|Citation: ||Journal of applied physics, 1 Nov. 2002, v. 92, no. 9, p.5420-5424.|
|Abstract: ||Bi₄Ti₃O₁₂-SrBi₄Ti₄O[sub 15] (BT-SBTi) thin film was fabricated successfully on Pt/TiO₂/SiO₂/Si(110) substrates by the pulsed laser deposition technique. Films annealed at 650 °C by the rapid temperature process (RTP) have P[sub r]= 12 µC/cm² . But, the fatigue behavior has been observed although no obvious decrease in P[sub r] up to 10[sup 5] s retained time in the BT-SBTi capacitor. After being La doped, the Bi[sub 3.25]La[sub 0.75]Ti₃O₁₂-SrBi₄Ti₄O[sub 15] (BLT-SBTi) has fatigue free properties. P[sub r]= 13.5 µC/cm² was measured in a BLT-SBTi film of 300 nm thickness. It did not show any significant fatigue up to 10[sup 10] switching cycles above the applied field of 250 kV/cm. It also has good retention properties. The field dependence of fatigue behavior and La-doped effect are discussed.|
|Rights: ||© 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J.S. Zhu et al. J. Appl. Phys. 92, 5420 (2002) and may be found at http://link.aip.org/link/?jap/92/5420|
|Type: ||Journal/Magazine Article|
|Appears in Collections:||AP Journal/Magazine Articles|
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