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Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/536

Title: Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au/GaN Schottky contacts
Authors: Wang, R. X.
Xu, S. J.
Shi, S. L.
Beling, C. D.
Fung, S.
Zhao, D. G.
Yang, H.
Tao, Xiaoming
Subjects: Gallium compounds
III-V semiconductors
Wide band gap semiconductors
Semiconductor epitaxial layers
Schottky barriers
Semiconductor-metal boundaries
Deep levels
Electron density
Electron mobility
Electrical conductivity
Semiconductor growth
Issue Date: 3-Oct-2006
Publisher: American Institute of Physics
Citation: Applied physics letters, 3 Oct. 2006, v. 89, no. 14, 143505, p. 1-3.
Abstract: Under identical preparation conditions, Au/GaN Schottky contacts were prepared on two kinds of GaN epilayers with significantly different background electron concentrations and mobility as well as yellow emission intensities. Current-voltage (I-V) and variable-frequency capacitance-voltage (C-V) characteristics show that the Schottky contacts on the GaN epilayer with a higher background carrier concentration and strong yellow emission exhibit anomalous reverse-bias I-V and C-V characteristics. This is attributed to the presence of deep level centers. Theoretical simulation of the low-frequency C-V curves leads to a determination of the density and energy level position of the deep centers.
Rights: © 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in R.X. Wang et al., Appl. Phys. Lett. 89, 143505 (2006) and may be found at http://link.aip.org/link/?apl/89/143505
Type: Journal/Magazine Article
URI: http://hdl.handle.net/10397/536
ISSN: 00036951
Appears in Collections:ITC Journal/Magazine Articles

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