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|Title: ||Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au/GaN Schottky contacts|
|Authors: ||Wang, R. X.|
Xu, S. J.
Shi, S. L.
Beling, C. D.
Zhao, D. G.
|Subjects: ||Gallium compounds|
Wide band gap semiconductors
Semiconductor epitaxial layers
|Issue Date: ||3-Oct-2006 |
|Publisher: ||American Institute of Physics|
|Citation: ||Applied physics letters, 3 Oct. 2006, v. 89, no. 14, 143505, p. 1-3.|
|Abstract: ||Under identical preparation conditions, Au/GaN Schottky contacts were prepared on two kinds of GaN epilayers with significantly different background electron concentrations and mobility as well as yellow emission intensities. Current-voltage (I-V) and variable-frequency capacitance-voltage (C-V) characteristics show that the Schottky contacts on the GaN epilayer with a higher background carrier concentration and strong yellow emission exhibit anomalous reverse-bias I-V and C-V
characteristics. This is attributed to the presence of deep level centers. Theoretical simulation of the low-frequency C-V curves leads to a determination of the density and energy level position of the deep centers.|
|Rights: ||© 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in R.X. Wang et al., Appl. Phys. Lett. 89, 143505 (2006) and may be found at http://link.aip.org/link/?apl/89/143505|
|Type: ||Journal/Magazine Article|
|Appears in Collections:||ITC Journal/Magazine Articles|
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