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Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/534

Title: Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts
Authors: Wang, R. X.
Xu, S. J.
Djurišić, A. B.
Beling, C. D.
Cheung, C. K.
Cheung, C. H.
Fung, S.
Zhao, D. G.
Yang, H.
Tao, Xiaoming
Subjects: Indium compounds
Tin compounds
Gallium compounds
III-V semiconductors
Wide band gap semiconductors
Schottky barriers
Leakage currents
Vacuum deposition
X-ray photoelectron spectra
Point defects
Issue Date: 19-Jul-2006
Publisher: American Institute of Physics
Citation: Applied physics letters, 19 July 2006, v. 89, no. 3, 033503, p. 1-3.
Abstract: Indium-tin-oxide (ITO)/n-GaN Schottky contacts were prepared by e-beam evaporation at 200°C under various partial pressures of oxygen. X-ray photoemission spectroscopy and positron beam measurements were employed to obtain chemical and structural information of the deposited ITO films. The results indicated that the observed variation in the reverse leakage current of the Schottky contact and the optical transmittance of the ITO films were strongly dependent on the quality of the ITO film. The high concentration of point defects at the ITO-GaN interface is suggested to be responsible for the large observed leakage current of the ITO/n-GaN Schottky contacts.
Rights: © 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in R.X. Wang et al., Appl. Phys. Lett. 89, 33503 (2006) and may be found at http://link.aip.org/link/?apl/89/033503
Type: Journal/Magazine Article
URI: http://hdl.handle.net/10397/534
ISSN: 00036951
Appears in Collections:ITC Journal/Magazine Articles

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