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|Title:||ZnO nanorod/GaN light-emitting diodes : the origin of yellow and violet emission bands under reverse and forward bias|
|Authors:||Chen, Xin Yi|
Ng, Alan M. C.
Ng, Yip Hang
Djurišić, A. B.
Tam, Hoi Lam
Cheah, K. W.
Chan, Wai Kin
Fong, Wai-keung Patrick
Lui, Hsian Fei
Light emitting diodes
Semiconductor quantum wells
Semiconductor thin films
Wide band gap semiconductors
|Publisher:||American Institute of Physics|
|Source:||Journal of applied physics, 1 Nov. 2011, v. 110, no. 9, 094513, p. 1-12.|
|Abstract:||ZnO nanorods have been prepared by electrodeposition under identical conditions on various p-GaN-based thin film structures. The devices exhibited lighting up under both forward and reverse biases, but the turn-on voltage and the emission color were strongly dependent on the p-GaN-based structure used. The origin of different luminescence peaks under forward and reverse bias has been studied by comparing the devices with and without ZnO and by photoluminescence and cathodoluminescence spectroscopy. We found that both yellow-orange emission under reverse bias and violet emission under forward bias, which are commonly attributed to ZnO, actually originate from the p-GaN substrate and/or surface/interface defects. While the absolute brightness of devices without InGaN multiple quantum wells was low, high brightness with luminance exceeding 10 000 cd/m² and tunable emission (from orange at 2.1 V to blue at 2.7 V, with nearly white emission with Commission internationale de l’éclairage (CIE) coordinates (0.30, 0.31) achieved at 2.5 V) was obtained for different devices containing InGaN multiple quantum wells.|
|Rights:||© 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Xinyi Chen et al., J. Appl. Phys. 110, 094513 (2011) and may be found at http://link.aip.org/link/?jap/110/094513.|
|Appears in Collections:||EIE Journal/Magazine Articles|
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