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|Title: ||Fine-grained BaZr[sub 0.2]Ti[sub 0.8]O₃ thin films for tunable device applications|
|Authors: ||Ying, Z.|
Song, Z. T.
Feng, S. L.
Chan, Helen L. W.
|Subjects: ||Barium compounds|
Ferroelectric thin films
Atomic force microscopy
Ferroelectric Curie temperature
|Issue Date: ||17-Apr-2007 |
|Publisher: ||American Institute of Physics|
|Citation: ||Journal of applied physics, 17 Apr. 2007, v. 101, 086101, p. 1-3.|
|Abstract: ||A study of the structure and in-plane dielectric properties of BaZr[sub 0.2]Ti[sub 0.8]O₃ thin film epitaxially
grown on (LaAlO₃)[sub 0.3](Sr₂AlTaO[sub 6])[sub 0.35] (001) single-crystal substrates through pulsed-laser deposition has been carried out. X-ray diffraction measurements revealed a good crystallinity and tensile in-plane stress in the film. Fine grains with an average size of ~20 nm were observed using atomic force microscopy. Curie temperature of the film was found to be ~120 °C, which is 100 °C higher than that of the ceramic. Butterfly-shaped C-V curve confirmed the in-plane ferroelectric
state in the film. A large dielectric tunability of ~50% was found in the film.|
|Rights: ||© 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Z. Ying et al. J. Appl. Phys. 101, 086101 (2007) and may be found at http://link.aip.org/link/?jap/101/086101|
|Type: ||Journal/Magazine Article|
|Appears in Collections:||MRC Journal/Magazine Articles|
AP Journal/Magazine Articles
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