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|Title: ||Nitrogen doped-ZnO/n-GaN heterojunctions|
|Authors: ||Chen, Xin Yi|
Ng, Alan M. C.
Djurišić, A. B.
Cheah, K. W.
Ling, C. -C.
Chan, W. K.
Fong, Wai-keung Patrick
Lui, H. F.
|Subjects: ||Doping profiles|
Wide band gap semiconductors
|Issue Date: ||15-Apr-2011 |
|Publisher: ||American Institute of Physics|
|Citation: ||Journal of applied physics, 15 Apr. 2011, v. 109, no. 8, 084330, p. 1-7.|
|Abstract: ||Nitrogen-doped ZnO nanorods were prepared by electrodeposition using two different Zn
precursors (zinc nitrate and zinc acetate), while all other growth conditions (dopant precursor, concentration, growth temperature, and bias) were identical. We have shown that the precursor used affects the properties of the ZnO nanorods, and that the presence of rectifying properties in
n-GaN/N:ZnO heterojunctions is strongly related to the use of nitrate precursor for ZnO growth. The difference in the properties of ZnO obtained from two precursors is attributed to the differences in native defect and impurity concentrations, which could affect the electronic properties of the samples.|
|Description: ||DOI: 10.1063/1.3575178|
|Rights: ||© 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in X. Y. Chen et al., J. Appl. Phys. 109, 084330 (2011) and may be found at http://link.aip.org/link/?jap/109/084330.|
|Type: ||Journal/Magazine Article|
|ISSN: ||0021-8979 (print)|
|Appears in Collections:||EIE Journal/Magazine Articles|
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