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Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4993

Title: Preparation of La-doped BiFeO₃thin films with Fe²⁺ ions on Si substrates
Authors: Gao, F.
Cai, C.
Wang, Y.
Dong, S.
Qiu, X. Y.
Yuan, G. L.
Liu, Z. G.
Liu, J. -M
Subjects: Lanthanum
Bismuth compounds
Ferroelectric thin films
Magnetic thin films
Pulsed laser deposition
Dielectric polarisation
Magnetisation
Ferromagnetic materials
Multiferroics
Issue Date: 1-May-2006
Publisher: American Institute of Physics
Citation: Journal of applied physics, 1 May 2006, v. 99, no. 9, 094105, p. 1-4.
Abstract: La-doped BiFeO₃thin films with Fe²⁺ ions have been prepared on Pt/TiO₂/SiO₂/Si substrates by pulsed laser deposition in order to enhance the ferroelectric and magnetic properties. The targets for the film deposition were synthesized using a rapid liquid phase sintering technique to ensure the low leakage. The dielectric properties at room temperature and above were investigated. It was observed that the La doping greatly enhances the ferroelectric polarization at room temperature by modifying the film structure from rhombohedral to monoclinic. The saturation magnetization was enhanced about two times due to the Fe²⁺ ions in the thin films.
Description: DOI: 10.1063/1.2195368
Rights: © 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in F. Gao et al., J. Appl. Phys. 99, 094105 (2006) and may be found at http://link.aip.org/link/?jap/99/094105.
Type: Journal/Magazine Article
URI: http://hdl.handle.net/10397/4993
ISSN: 0021-8979 (print)
1089-7550 (online)
Appears in Collections:AP Journal/Magazine Articles

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