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|Title: ||Modeling of anomalous shift and asymmetric hysteresis behavior of ferroelectric thin films|
|Authors: ||Wong, Chung-kwan|
Shin, Franklin G.
|Subjects: ||Ferroelectric materials|
Ferroelectric thin films
|Issue Date: ||1-Dec-2004 |
|Publisher: ||American Institute of Physics|
|Citation: ||Journal of applied physics, 1 Dec. 2004, v. 96, no. 11, p. 6648-6656.|
|Abstract: ||An analytical bilayer model has been developed to consider the effect of the existence of a dead layer (e.g., due to polarization degradation) at the film-electrode interface in an otherwise
homogeneous ferroelectric thin film. By introducing asymmetric conductivity in the dead layer, the anomalous horizontal (along the field axis) shift behavior of hysteresis loops in ferroelectric thin films is successfully reproduced. Assuming that the ferroelectric P-E hysteresis loops of the layers are parallelogramlike, explicit expressions are derived for calculating the internal fields in the film, as well as the “apparent” D-E loop as measured from a Sawyer-Tower circuit. The general switching
sequence for the ferroelectric phases will be considered. Using the ferroelectric-ferroelectric bilayer model, other anomalous phenomena, including vertical shift and deformed loop shape are also modeled.|
|Description: ||DOI: 10.1063/1.1810634|
|Rights: ||© 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in C. K. Wong, F. G. Shin et al., J. Appl. Phys. 96, 6648 (2004) and may be found at http://link.aip.org/link/?jap/96/6648.|
|Type: ||Journal/Magazine Article|
|ISSN: ||0021-8979 (print)|
|Appears in Collections:||AP Journal/Magazine Articles|
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