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Title: Ion channeling studies on mixed phases formed in metalorganic chemical vapor deposition grown Mg-doped GaN on Al₂O₃(0001)
Authors: Sundaravel, B.
Luo, E. Z.
Xu, J. B.
Wilson, I. H.
Fong, Wai-keung Patrick
Wang, L. S.
Surya, Charles
Subjects: Gallium compounds
III-V semiconductors
Wide band gap semiconductors
MOCVD coatings
Semiconductor thin films
Rutherford backscattering
X-ray diffraction
Stacking faults
Dislocation density
Dislocation structure
Issue Date: 15-Jan-2000
Publisher: American Institute of Physics
Source: Journal of applied physics, 15 Jan. 2000, v. 87, no. 2, p. 955-957.
Abstract: Rutherford backscattering spectrometry and ion channeling were used to determine the relative quantities of wurtzite and zinc-blende phases in metalorganic chemical vapor deposition grown Mg-doped GaN(001) on an Al₂O₃(0001) substrate with a GaN buffer layer. Off-normal axial channeling scans were used. High-resolution x-ray diffraction measurements also confirmed the presence of mixed phases. The in-plane orientation was found to be GaN[¯110]││GaN[¯1120]││Al₂O₃[¯1120]. The effects of rapid thermal annealing on the relative phase content, thickness and crystalline quality of the GaN epilayer were also studied.
Rights: © 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in B. Sundaravel et al., J. Appl. Phys. 87, 955 (2000) and may be found at
Type: Journal/Magazine Article
DOI: 10.1063/1.371966
ISSN: 0021-8979 (print)
1089-7550 (online)
Appears in Collections:EIE Journal/Magazine Articles

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