PolyU IR

PolyU Institutional Repository >
Applied Physics >
AP Journal/Magazine Articles >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4980

Title: Epitaxial Pb(Zr₀.₅₂Ti₀.₄₈)O₃/La₀.₃₅Nd₀.₃₅Sr₀.₃MnO₃heterostructures for fabrication of ferroelectric field-effect transistor
Authors: Wu, Wenbin
Wong, Kin-hung
Mak, Chee-leung
Choy, Chung-loong
Zhang, Y. H.
Subjects: Lead compounds
Lanthanum compounds
Pulsed laser deposition
Ferroelectric materials
Ferroelectric thin films
Field effect transistors
Dielectric polarisation
Issue Date: 15-Aug-2000
Publisher: American Institute of Physics
Citation: Journal of applied physics, 15 Aug. 2000, v. 88, no. 4, p. 2068-2071.
Abstract: Epitaxial La₀.₃₅Nd₀.₃₅Sr₀.₃MnO₃(LNSMO) thin films and Pb(Zr₀.₅ ₂Ti₀.₄₈)O₃(PZT)/LNSMO heterostructures have been grown on LaAlO₃(001) substrates by the pulsed laser deposition method. The oxygen concentration in the LNSMO films is quite sensitive to the deposition oxygen pressure and can be controlled during the fabrication process. It is, however, stable against in situ postdeposition thermal treatments. Consequently, the resistivity and the metal-semiconductor transition temperature of the LNSMO films can be tuned and fixed during film growth. Electrical measurements on the Pt/PZT/LNSMO ferroelectric capacitor show a remnant polarization of ~35 μC/cm² and a coercive field of 30–40 kV/cm at low driving voltages. Switching endurance tests suggest no polarization loss up to about 10¹⁰ bipolar switching cycles. The advantages of using epitaxial LNSMO films as the semiconducting channel in an all-perovskite ferroelectric field-effect transistor are discussed.
Description: DOI: 10.1063/1.1305859
Rights: © 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in W. Wu et al., J. Appl. Phys. 88, 2068 (2000) and may be found at http://link.aip.org/link/?jap/88/2068.
Type: Journal/Magazine Article
URI: http://hdl.handle.net/10397/4980
ISSN: 0021-8979 (print)
1089-7550 (online)
Appears in Collections:AP Journal/Magazine Articles

Files in This Item:

File Description SizeFormat
Wu_Epitaxial_Pb_heterostructures.pdf666.66 kBAdobe PDFView/Open

Facebook Facebook del.icio.us del.icio.us LinkedIn LinkedIn

All items in the PolyU Institutional Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
No item in the PolyU IR may be reproduced for commercial or resale purposes.


© Pao Yue-kong Library, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
Powered by DSpace (Version 1.5.2)  © MIT and HP
Feedback | Privacy Policy Statement | Copyright & Restrictions - Feedback