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Title: Effect of annealing in reduced oxygen pressure on the electrical transport properties of epitaxial thin film and bulk (La₁₋ₓNdₓ)₀.₇Sr₀.₃MnO₃
Authors: Wu, Wenbin
Wong, Kin-hung
Li, X.-G.
Choy, Chung-loong
Zhang, Y. H.
Subjects: Lanthanum compounds
Neodymium compounds
Strontium compounds
Colossal magnetoresistance
Magnetic epitaxial layers
Pulsed laser deposition
Grain boundaries
Issue Date: 15-Mar-2000
Publisher: American Institute of Physics
Source: Journal of applied physics, 15 Mar. 2000, v. 87, no. 6, p. 3006-3010.
Abstract: A comparative study of the effect of annealing in reduced oxygen pressure on the electrical transport properties of (La₁₋ ₓNdₓ)₀.₇Sr₀.₃MnO₃(x=0, 0.25, 0.5, 0.75, and 1) epitaxial thin films and bulk materials has been carried out. The epitaxial films grown by pulsed laser ablation were in situ annealed in an oxygen atmosphere of 2 X 10⁻ ⁶– 760 Torr at 700 °C for 1 h. It is found that the electrical transport behavior of the epitaxial film is insensitive to the annealing pressure. A similar thermal treatment on the bulk materials at 5 mTorr oxygen ambient, however, caused a dramatic change in their resistivity-temperature dependence. Our results suggest that the annealing has a prominent effect on the properties of grain boundary, which plays an important role in determining the electrical transport behavior of polycrystalline manganites.
Rights: © 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in W. Wu et al., J. Appl. Phys. 87, 3006 (2000) and may be found at
Type: Journal/Magazine Article
DOI: 10.1063/1.372291
ISSN: 0021-8979 (print)
1089-7550 (online)
Appears in Collections:MRC Journal/Magazine Articles
AP Journal/Magazine Articles

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