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|Title: ||Investigation of Ge nanocrytals in a metal-insulator-semiconductor structure with a HfO₂/SiO₂stack as the tunnel dielectric|
|Authors: ||Wang, Shiye|
Liu, W. L.
Song, Z. T.
|Subjects: ||Hafnium compounds|
Electron beam deposition
Transmission electron microscopy
Dielectric thin films
|Issue Date: ||14-Mar-2005 |
|Publisher: ||American Institute of Physics|
|Citation: ||Applied physics letters, 14 Mar. 2005, v. 86, no. 11, 113105, p. 1-3.|
|Abstract: ||A metal-insulator-semiconductor (MIS) structure containing a HfO₂control gate, a Ge nanocrystal-embedded HfO₂dielectric and a HfO₂/SiO₂stack layer as tunnel oxide, was fabricated by an electron-beam evaporation method. High-resolution transmission electron microscopy study revealed that the HfO₂/SiO₂stack layer minimized Ge penetration, leading to the formation of Ge nanocrystals that are self-aligned between the tunnel oxide and the capping HfO₂layer. Influence of different annealing conditions on the formation and distribution of Ge nanocrystals was studied. Current–voltage (I–V) and capacitance–voltage (C–V) measurements revealed promising electrical characteristics of the MIS structure, and relatively high stored charge density of 10¹² cm⁻² was achieved.|
|Description: ||DOI: 10.1063/1.1864254|
|Rights: ||© 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in S. Wang et al., Appl. Phys. Lett. 86, 113105 (2005) and may be found at http://link.aip.org/link/?apl/86/113105|
|Type: ||Journal/Magazine Article|
|ISSN: ||0003-6951 (print)|
|Appears in Collections:||AP Journal/Magazine Articles|
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