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Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4877

Title: Memory effects of carbon nanotubes as charge storage nodes for floating gate memory applications
Authors: Lu, X. B.
Dai, Jiyan
Subjects: Carbon nanotubes
Flash memories
Nanotube devices
Hafnium compounds
Hole traps
Issue Date: 13-Mar-2006
Publisher: American Institute of Physics
Citation: Applied physics letters, 13 Mar. 2006, v. 88, no. 11, 113104, p. 1-3.
Abstract: A nonvolatile flash memory device has been fabricated using carbon nanotubes (CNTs) as a floating gate embedded in HfAlO (the atomic ratio of Hf/Al is 1:2) high-k tunneling/control oxides and its memory effect has been observed. Capacitance-voltage (C-V) measurements illustrated a 400 mV memory window during the double C-V sweep from 3 to −3 V performed at room temperature and 1 MHz. Further studies on their programming characteristics revealed that electron is difficult to be written into the CNTs and the memory effect of the structures is mainly due to the holes traps. The memory window width can remain nearly unchanged even after 10⁴ s stressing, indicating excellent long term charge retention characteristics. We therefore suggest that the CNTs embedded in HfAlO can be potentially applied to floating gate flash memory devices.
Description: DOI: 10.1063/1.2179374
Rights: © 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in X. B. Lu and J. Y. Dai, Appl. Phys. Lett. 88, 113104 (2006) and may be found at http://link.aip.org/link/?apl/88/113104
Type: Journal/Magazine Article
URI: http://hdl.handle.net/10397/4877
ISSN: 0003-6951 (print)
1077-3118 (online)
Appears in Collections:MRC Journal/Magazine Articles
AP Journal/Magazine Articles

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