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Title: Effects of substrate-induced strain on transport properties of LaMnO[sub 3+δ] and CaMnO₃ thin films using ferroelectric poling and converse piezoelectric effect
Authors: Zheng, R. K.
Habermeier, H.-U.
Chan, Helen L. W.
Choy, Chung-loong
Luo, H. S.
Subjects: Calcium compounds
Jahn-Teller effect
Lanthanum compounds
Lead compounds
Magnesium compounds
Magnetoresistance
Metal-insulator boundaries
Niobium compounds
Piezoelectricity
Thin films
Issue Date: 1-Mar-2010
Publisher: American Physical Society
Citation: Physical review B, condensed matter and materials physics, 1 Mar. 2010, v. 81, no. 10, 104427, p. 1-9.
Abstract: We have investigated the effects of the strain induced by ferroelectric poling (or the converse piezoelectric effect) on the transport properties of LaMnO[sub 3+δ] and CaMnO₃ thin films grown on ferroelectric 0.67Pb(Mg[sub 1/3]Nb[sub 2/3])O₃-0.33PbTiO₃ single-crystal substrates. The ferroelectric poling of the substrate gives rise to a reduction in the in-plane tensile strain of the LaMnO[sub 3+δ] film, which results in a significant decrease in the resistance and increase in the insulator-to-metal transition temperature T[sub P] of the film. The ferroelectric poling also leads to opposite effects on the magnetoresistance (MR) below and above T[sub P], namely, MR is reduced for T<T[sub P] while MR is enhanced for T>T[sub P]. These strain effects are explained in terms of coexisting phases whose volume fractions are modified as a result of the reduction in the Jahn-Teller (JT) distortion due to ferroelectric poling. An investigation of the effects of the strain induced by the converse piezoelectric effect on the resistance of the LaMnO[sub 3+δ] and CaMnO₃ films shows that the resistance-strain coefficients (ΔR/R)/(Δc[sub film]/c[sub film]) of the LaMnO[sub 3+δ] film is much larger than those of the CaMnO₃ film. This result may imply that the strain-induced modification of the electronic bandwidth alone cannot account for the large (ΔR/R)/(Δc[sub film]/c[sub film]) observed in the LaMnO[sub 3+δ] film, and highlights that the strong coupling of charge carriers to JT distortion is crucial for understanding the effects of the substrate-induced strain in manganite thin films.
Description: DOI: 10.1103/PhysRevB.81.104427
Rights: Physical Review B © 2010 The American Physical Society. The Journal's web site is located at http://prb.aps.org/
Type: Journal/Magazine Article
URI: http://hdl.handle.net/10397/4871
ISSN: 1098-0121 (print)
1550-235X (online)
Appears in Collections:AP Journal/Magazine Articles
MRC Journal/Magazine Articles

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