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|Title: ||Unification of bulk and interface electroresistive switching in oxide systems|
|Authors: ||Ruotolo, Antonio|
Leung, C. W.
Lam, C. Y.
|Subjects: ||Dielectric hysteresis|
|Issue Date: ||15-Jun-2008 |
|Publisher: ||American Physical Society|
|Citation: ||Physical review B, condensed matter and materials physics, 15 June 2008, v. 77, no. 23, 233103, p. 1-4.|
|Abstract: ||We demonstrate that the physical mechanism behind electroresistive switching in oxide Schottky systems is electroformation, as in insulating oxides. Negative resistance shown by the hysteretic current-voltage curves proves that impact ionization is at the origin of the switching. Analyses of the capacitance-voltage and conductance-voltage curves through a simple model show that an atomic rearrangement is involved in the process. Switching in these systems is a bulk effect, not strictly confined at the interface but at the charge space region.|
|Description: ||DOI: 10.1103/PhysRevB.77.233103|
|Rights: ||Physical Review B © 2008 The American Physical Society. The Journal's web site is located at http://prb.aps.org/|
|Type: ||Journal/Magazine Article|
|ISSN: ||1098-0121 (print)|
|Appears in Collections:||AP Journal/Magazine Articles|
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