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Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/4790
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| Title: | Unification of bulk and interface electroresistive switching in oxide systems |
| Authors: | Ruotolo, Antonio
Leung, C. W.
Lam, C. Y.
Cheng, Wang-fai
Wong, Kin-hung |
| Subjects: | Dielectric hysteresis
Ferroelectric switching
Impact ionisation
Lanthanum compounds
Negative resistance
Permittivity
Schottky barriers
Strontium compounds
Titanium compounds |
| Issue Date: | 15-Jun-2008 |
| Publisher: | American Physical Society |
| Citation: | Physical review B, condensed matter and materials physics, 15 June 2008, v. 77, no. 23, 233103, p. 1-4. |
| Abstract: | We demonstrate that the physical mechanism behind electroresistive switching in oxide Schottky systems is electroformation, as in insulating oxides. Negative resistance shown by the hysteretic current-voltage curves proves that impact ionization is at the origin of the switching. Analyses of the capacitance-voltage and conductance-voltage curves through a simple model show that an atomic rearrangement is involved in the process. Switching in these systems is a bulk effect, not strictly confined at the interface but at the charge space region. |
| Description: | DOI: 10.1103/PhysRevB.77.233103 |
| Rights: | Physical Review B © 2008 The American Physical Society. The Journal's web site is located at http://prb.aps.org/ |
| Type: | Journal/Magazine Article |
| URI: | http://hdl.handle.net/10397/4790 |
| ISSN: | 1098-0121 (print)
1550-235X (online) |
| Appears in Collections: | AP Journal/Magazine Articles
MRC Journal/Magazine Articles
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