Please use this identifier to cite or link to this item:
Title: Unification of bulk and interface electroresistive switching in oxide systems
Authors: Ruotolo, Antonio
Leung, C. W.
Lam, C. Y.
Cheng, Wang-fai
Wong, Kin-hung
Subjects: Dielectric hysteresis
Ferroelectric switching
Impact ionisation
Lanthanum compounds
Negative resistance
Schottky barriers
Strontium compounds
Titanium compounds
Issue Date: 15-Jun-2008
Publisher: American Physical Society
Source: Physical review B, condensed matter and materials physics, 15 June 2008, v. 77, no. 23, 233103, p. 1-4.
Abstract: We demonstrate that the physical mechanism behind electroresistive switching in oxide Schottky systems is electroformation, as in insulating oxides. Negative resistance shown by the hysteretic current-voltage curves proves that impact ionization is at the origin of the switching. Analyses of the capacitance-voltage and conductance-voltage curves through a simple model show that an atomic rearrangement is involved in the process. Switching in these systems is a bulk effect, not strictly confined at the interface but at the charge space region.
Rights: Physical Review B © 2008 The American Physical Society. The Journal's web site is located at
Type: Journal/Magazine Article
DOI: 10.1103/PhysRevB.77.233103
ISSN: 1098-0121 (print)
1550-235X (online)
Appears in Collections:MRC Journal/Magazine Articles
AP Journal/Magazine Articles

Files in This Item:
File Description SizeFormat 
Ruotolo_Bulk_Interface_Electroresistive.pdf326.99 kBAdobe PDFView/Open

All items in the PolyU Institutional Repository are protected by copyright, with all rights reserved, unless otherwise indicated. No item in the PolyU IR may be reproduced for commercial or resale purposes.