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|Title:||Unification of bulk and interface electroresistive switching in oxide systems|
Leung, C. W.
Lam, C. Y.
|Publisher:||American Physical Society|
|Source:||Physical review B, condensed matter and materials physics, 15 June 2008, v. 77, no. 23, 233103, p. 1-4.|
|Abstract:||We demonstrate that the physical mechanism behind electroresistive switching in oxide Schottky systems is electroformation, as in insulating oxides. Negative resistance shown by the hysteretic current-voltage curves proves that impact ionization is at the origin of the switching. Analyses of the capacitance-voltage and conductance-voltage curves through a simple model show that an atomic rearrangement is involved in the process. Switching in these systems is a bulk effect, not strictly confined at the interface but at the charge space region.|
|Rights:||Physical Review B © 2008 The American Physical Society. The Journal's web site is located at http://prb.aps.org/|
|Appears in Collections:||MRC Journal/Magazine Articles|
AP Journal/Magazine Articles
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