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Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/4788
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| Title: | High-quality all-oxide Schottky junctions fabricated on heavily doped Nb:SrTiO₃ substrates |
| Authors: | Ruotolo, Antonio
Lam, C. Y.
Cheng, Wang-fai
Wong, Kin-hung
Leung, C. W. |
| Subjects: | Heavily doped semiconductors
Lanthanum compounds
Niobium
Rectification
Schottky barriers
Semiconductor-metal boundaries
Strontium compounds |
| Issue Date: | 15-Aug-2007 |
| Publisher: | American Physical Society |
| Citation: | Physical review B, condensed matter and materials physics, 15 Aug. 2007, v. 76, no. 7, 075122, p. 1-5. |
| Abstract: | We present a detailed investigation of the electrical properties of epitaxial La₀.₇Sr₀.₃MnO₃∕SrTi₀.₉₈Nb₀.₀₂O₃ Schottky junctions. A fabrication process that allows reduction of the junction dimensions to current electronic device size has been employed. A heavily doped semiconductor has been used as a substrate in order to suppress its series resistance. We show that, unlike standard semiconductors, high-quality oxide-based Schottky junctions maintain a highly rectifying behavior for doping concentration of the semiconductor larger than 10²⁰ cm⁻³. Moreover, the junctions show hysteretic current-voltage characteristics. |
| Description: | DOI: 10.1103/PhysRevB.76.075122 |
| Rights: | Physical Review B © 2007 The American Physical Society. The Journal's web site is located at http://prb.aps.org/ |
| Type: | Journal/Magazine Article |
| URI: | http://hdl.handle.net/10397/4788 |
| ISSN: | 1098-0121 (print)
1550-235X (online) |
| Appears in Collections: | AP Journal/Magazine Articles
MRC Journal/Magazine Articles
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