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|Title: ||High-quality all-oxide Schottky junctions fabricated on heavily doped Nb:SrTiO₃ substrates|
|Authors: ||Ruotolo, Antonio|
Lam, C. Y.
Leung, C. W.
|Subjects: ||Heavily doped semiconductors|
|Issue Date: ||15-Aug-2007 |
|Publisher: ||American Physical Society|
|Citation: ||Physical review B, condensed matter and materials physics, 15 Aug. 2007, v. 76, no. 7, 075122, p. 1-5.|
|Abstract: ||We present a detailed investigation of the electrical properties of epitaxial La₀.₇Sr₀.₃MnO₃∕SrTi₀.₉₈Nb₀.₀₂O₃ Schottky junctions. A fabrication process that allows reduction of the junction dimensions to current electronic device size has been employed. A heavily doped semiconductor has been used as a substrate in order to suppress its series resistance. We show that, unlike standard semiconductors, high-quality oxide-based Schottky junctions maintain a highly rectifying behavior for doping concentration of the semiconductor larger than 10²⁰ cm⁻³. Moreover, the junctions show hysteretic current-voltage characteristics.|
|Description: ||DOI: 10.1103/PhysRevB.76.075122|
|Rights: ||Physical Review B © 2007 The American Physical Society. The Journal's web site is located at http://prb.aps.org/|
|Type: ||Journal/Magazine Article|
|ISSN: ||1098-0121 (print)|
|Appears in Collections:||AP Journal/Magazine Articles|
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