PolyU IR
 

PolyU Institutional Repository >
Applied Physics >
AP Journal/Magazine Articles >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4781

Title: Tunable electronic transport properties of DyScO₃/SrTiO₃ polar heterointerface
Authors: Li, D. F.
Wang, Yan
Dai, Jiyan
Subjects: Carrier mobility
Doping profiles
Dysprosium compounds
Insulating thin films
Interface phenomena
Interface states
Metal-insulator transition
Strontium compounds
Issue Date: 21-Mar-2011
Publisher: American Institue of Physics
Citation: Applied physics letters, 21 Mar. 2011, v. 98, 122108, p. 1-3.
Abstract: Electronic transport properties of DyScO₃/SrTiO₃ polar heterointerface grown at different oxygen pressures are studied. This DyScO₃/SrTiO₃ polar heterointerface exhibits much higher charge mobility, up to 10⁴ cm² V⁻¹ s⁻¹, compared to the LaAlO₃/SrTiO₃ system due to relatively lower lattice mismatch between the film and substrate. More significantly, the DyScO₃ film deposited under 10⁻⁴ mbar oxygen pressure presents an interfacial metal-to-semiconductor conducting mechanism transition at 90 K. Field effect transport measurement results reveal that this transition can be modulated by field effect through controlling the electron doping level of the interface originated from interfacial electronic reconstruction.
Description: DOI: 10.1063/1.3570694
Rights: © 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in D. F. Li, Yan Wang, & J. Y. Dai, Appl. Phys. Lett. 98, 122108 (2011) and may be found at http://link.aip.org/link/?apl/98/122108
Type: Journal/Magazine Article
URI: http://hdl.handle.net/10397/4781
ISSN: 0003-6951 (print)
1077-3118 (online)
Appears in Collections:AP Journal/Magazine Articles

Files in This Item:

File Description SizeFormat
Li_Tunable_Electronic_Transport.pdf801.88 kBAdobe PDFView/Open



Facebook Facebook del.icio.us del.icio.us LinkedIn LinkedIn


All items in the PolyU Institutional Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
No item in the PolyU IR may be reproduced for commercial or resale purposes.

 

© Pao Yue-kong Library, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
Powered by DSpace (Version 1.5.2)  © MIT and HP
Feedback | Privacy Policy Statement | Copyright & Restrictions - Feedback