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|Title: ||Electroluminescence from AlN nanowires grown on p-SiC substrate|
|Authors: ||Yang, H. Y.|
Yu, S. F.
Hui, Y. Y.
Lau, S. P.
|Subjects: ||Aluminium compounds|
Light emitting diodes
Semiconductor quantum wires
Wide band gap semiconductors
|Issue Date: ||8-Nov-2010 |
|Publisher: ||American Institute of Physics|
|Citation: ||Applied physics letters, 8 Nov. 2010, v. 97, no. 19, 191105, p. 1-3.|
|Abstract: ||Aluminum nitride (AlN) nanowires were prepared by the carbothermal reduction method. A heterojunction light-emitting diode (LED) was fabricated by depositing randomly aligned AlN nanowires onto p-type 4H–SiC substrate. When a forward bias voltage greater than 8 V was applied to the LED, a broad band emission peaked at 417 nm could be observed. The peak deconvolution revealed four emission peaks at ∼ 400, 420, 468, and 525 nm. These emission peaks may be attributed to the radiative recombination between electrons from trap-level states and holes from the valence band of the AlN nanowires.|
|Description: ||DOI: 10.1063/1.3513308|
|Rights: ||© 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in H. Y. Yang et al., Appl. Phys. Lett. 97, 191105 (2010) and may be found at http://link.aip.org/link/?apl/97/191105|
|Type: ||Journal/Magazine Article|
|ISSN: ||0003-6951 (print)|
|Appears in Collections:||AP Journal/Magazine Articles|
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