Please use this identifier to cite or link to this item:
|Title:||Monte Carlo simulation of pulsed laser deposition|
Liu, S. J.
|Subjects:||Monte Carlo method|
|Publisher:||American Physical Society|
|Source:||Physical review B, condensed matter and materials physics, 15 July 2002, v. 66, no. 4, 045408, p. 1-6.|
|Abstract:||Using the Monte Carlo method, we have studied the pulsed laser deposition process at the submonolayer regime. In our simulations, dissociation of an atom from a cluster is incorporated. Our results indicate that the pulsed laser deposition resembles molecular-beam epitaxy at very low intensity, and that it is characteristically different from molecular-beam epitaxy at higher intensity. We have also obtained the island size distributions. The scaling function for the island size distribution for pulsed laser deposition is different from that of molecular-beam epitaxy.|
|Rights:||Physical Review B © 2002 The American Physical Society. The Journal's web site is located at http://prb.aps.org/|
|Appears in Collections:||ME Journal/Magazine Articles|
Files in This Item:
|Lam_Monte_Carlo_Simulation.pdf||229.9 kB||Adobe PDF||View/Open|
All items in the PolyU Institutional Repository are protected by copyright, with all rights reserved, unless otherwise indicated. No item in the PolyU IR may be reproduced for commercial or resale purposes.