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|Title: ||Ni–Al diffusion barrier layer for integrating ferroelectric capacitors on Si|
|Authors: ||Liu, B. T.|
Cheng, C. S.
Zhao, Q. X.
Wu, D. Q.
Li, C. R.
Li, X. H.
Zhang, X. Y.
|Subjects: ||Nickel alloys|
Metallic thin films
|Issue Date: ||19-Jun-2006 |
|Publisher: ||American Institute of Physics|
|Citation: ||Applied physics letters, 19 June 2006, v. 88, no. 25, 252903, p. 1-3.|
|Abstract: ||We report on the use of amorphous Ni–Al film (a-Ni–Al) as conductive diffusion barrier layer to integrate La₀.₅Sr₀.₅CoO₃/PbZr₀.₄Ti₀.₆O₃/La₀.₅Sr₀.₅CoO₃capacitors on silicon. Cross-sectional observation by transmission electron microscope reveals clean and sharp interfaces without any discernible interdiffusion/reaction in the sample. The physical properties of the capacitors are vertically characterized as the parameters of memory elements. Excellent ferroelectric properties, e.g., large remnant polarization of ∼ 22 μC/cm², small coercive voltage of ∼ 1.15 V, being fatigue-free, good retention characteristic, imply that amorphous Ni–Al is an ideal candidate for diffusion barrier for the high-density ferroelectric random access memories integrated with silicon transistor technology.|
|Description: ||DOI: 10.1063/1.2214142|
|Rights: ||© 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in B. T. Liu et al., Appl. Phys. Lett. 88, 252903 (2006) and may be found at http://link.aip.org/link/?apl/88/252903|
|Type: ||Journal/Magazine Article|
|ISSN: ||0003-6951 (print)|
|Appears in Collections:||AP Journal/Magazine Articles|
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