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|Title: ||Processing and properties of Yb-doped BiFeO₃ceramics|
|Authors: ||Yan, Z.|
Qu, J. F.
Song, Z. T.
Feng, S. L.
|Subjects: ||Bismuth compounds|
Rapid thermal processing
|Issue Date: ||20-Aug-2007 |
|Publisher: ||American Institute of Physics|
|Citation: ||Applied physics letters, 20 Aug. 2007, v. 91, no. 8, 082906, p. 1-3|
|Abstract: ||The authors prepared Yb-doped bismuth iron oxide ceramics (Bi[sub 1−x]Yb[sub x]FeO₃, with 0 ≤ x ≤ 0.20) by rapid liquid phase sintering method and investigated the material’s structures and electrical properties. The x-ray diffraction measurements showed that the doping of Yb has induced noticeable lattice distortion in the ceramics, and a largest distortion was observed when the concentration of Yb was 15%. By doping electrical resistivity, ferroelectric and dielectric properties of the ceramics were improved. Among all samples, BiFeO₃doped with 15% Yb was found to have the smallest leakage current density (<10⁻⁷ A/cm²) and the largest remnant polarization (8.5 μC/cm²).|
|Description: ||DOI: 10.1063/1.2775034|
|Rights: ||© 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Z. Yan et al., Appl. Phys. Lett. 91, 082906 (2007) and may be found at http://link.aip.org/link/?apl/91/082906|
|Type: ||Journal/Magazine Article|
|ISSN: ||0003-6951 (print)|
|Appears in Collections:||AP Journal/Magazine Articles|
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