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|Title: ||Rectifying characteristics and transport behavior of SrTiO[sub3−δ]110/p-Si (100) heterojunctions|
|Authors: ||Luo, Zhi|
Hao, J. H.
|Subjects: ||p-n heterojunctions|
|Issue Date: ||6-Aug-2007 |
|Publisher: ||American Institute of Physics|
|Citation: ||Applied physics letters, 6 Aug. 2007, v. 91, no. 6, 062105, p. 1-3.|
|Abstract: ||Introducing oxygen vacancy causes the dielectric insulator SrTiO₃ to evolve to a n-type semiconductor. The authors have fabricated n-SrTiO[sub 3−δ](110)/p-Si (100) heterojunctions, showing clear rectifying characteristics at different temperatures from 100 to 292 K. A forward-to-reverse bias ratio of about 1200 was found at V = ±2 V for the p-n junction operated at T = 292 K. The current-voltage characteristic follows I∝exp(eV/ηkT) for the p-n junction at relatively low forward-bias voltage, while the relation of I ∼ V¹∙⁹ describes the transport behavior of p-n junction at relatively high forward-bias voltage. The measured results have been discussed in Anderson model and space charge limited model.|
|Description: ||DOI: 10.1063/1.2767999|
|Rights: ||© 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Z. Luo, J. H. Hao & J. Gao, Appl. Phys. Lett. 91, 062105 (2007) and may be found at http://link.aip.org/link/?apl/91/062105|
|Type: ||Journal/Magazine Article|
|ISSN: ||0003-6951 (print)|
|Appears in Collections:||AP Journal/Magazine Articles|
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