Simulation of twin boundary effect on characteristics of single grain-silicon thin film transistors

Abstract

The influence of twin boundaries on the characteristics of single grain-silicon thin film transistors has been analyzed by three-dimensional simulation. The simulations show that the orientation and the location of a twin boundary could affect the field-effect mobility and the leakage current of a device. The field-effect mobility increases with the increase of the angle between the normal direction of the twin boundary and the channel direction. A single twin boundary in contact with the drain can lead to higher leakage current because electron-hole generation is greatly enhanced by the trap states in the twin boundary.