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|Title: ||Piezoelectric coefficient of aluminum nitride and gallium nitride|
|Authors: ||Lueng, Chiu-ming|
Chan, Helen L. W.
|Subjects: ||Aluminium compounds|
Piezoelectric thin films
Wide band gap semiconductors
|Issue Date: ||1-Nov-2000 |
|Publisher: ||American Institute of Physics|
|Citation: ||Journal of applied physics, 1 Nov. 2000, v. 88, no. 9, p.5360-5363|
|Abstract: ||The piezoelectric coefficient d₃₃ of aluminum nitride (AlN) and gallium nitride (GaN) thin films grown on silicon substrates by molecular beam epitaxy have been measured using a laser interferometer. X-ray diffraction reveals that the AlN and GaN films consist mainly of crystals with a hexagonal wurtzite structure. In order to grow epitaxial GaN films, an AlN film was first deposited on silicon as the buffer layer, so the d₃₃ measurement for GaN was actually performed on GaN/AlN/Si multilayer systems. The relative permittivity and electrical resistivity of each constituent layer of the film and the potential drop across each layer were determined as a function of frequency. The potential drops were then used to calculate the piezoelectric coefficient d₃₃ of GaN. After correcting for substrate clamping, d₃₃ of AlN and GaN were found to be (5.1±0.1) and (3.1±0.1) pm Vˉ¹, respectively.|
|Rights: ||© 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in C.M. Lueng et al. J. Appl. Phys. 88, 5360 (2000) and may be found at http://link.aip.org/link/?jap/88/5360|
|Type: ||Journal/Magazine Article|
|Appears in Collections:||EIE Journal/Magazine Articles|
AP Journal/Magazine Articles
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