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Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4579

Title: Ion-implantation induced nano distortion layer and its influence on nonlinear optical properties of ZnO single crystals
Authors: Zheng, C. C.
Xu, S. J.
Ning, J. Q.
Chen, Y. N.
Lu, X. H.
Ling, C. -C.
Che, C. M.
Gao, Guanyin
Hao, J. H.
Brauer, G.
Anwand, W.
Subjects: Copper
II-VI semiconductors
Ion implantation
Light polarisation
Nanostructured materials
Nonlinear optical susceptibility
Optical harmonic generation
Wide band gap semiconductors
X-ray diffraction
Zinc compounds
Issue Date: 15-Oct-2011
Publisher: American Institute of Physics
Citation: Journal of applied physics, 15 Oct. 2011, v. 110, no. 8, 083102, p. 1-6.
Abstract: Second harmonic generation (SHG) and X-ray diffraction rocking curves of high-quality ZnO single crystals implanted by different ions (He, Cu, and Zn) were investigated. Interestingly, it was found that both He- and Zn-implanted samples show a convinced increment in SHG efficiency while the Cu-implanted one does not. X-ray diffraction rocking curves of the samples show satellite structures, and the simulations firmly reveal the formation of quasi-interfaces inside He- and Zn-implanted crystals. These quasi-interfaces lead to SHG improvement in the two samples. Polarization dependence of SHG of the samples on the excitation light also evidences this conclusion.
Description: DOI: 10.1063/1.3651379
Rights: © 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in C.C. Zheng et al., J. Appl. Phys. 110, 083102 (2011) and may be found at http://link.aip.org/link/?jap/110/083102.
Type: Journal/Magazine Article
URI: http://hdl.handle.net/10397/4579
ISSN: 0021-8979
Appears in Collections:AP Journal/Magazine Articles

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