PolyU Institutional Repository >
Applied Physics >
AP Journal/Magazine Articles >
Please use this identifier to cite or link to this item:
|Title: ||Phase-change control of ferromagnetism in GeTe-based phase change magnetic thin-films by pulsed laser deposition|
|Authors: ||Tong, F.|
Hao, J. H.
Chen, Z. P.
Miao, X. S.
|Subjects: ||Amorphous magnetic materials|
Magnetic thin films
Phase change materials
Pulsed laser deposition
Semiconductor thin films
|Issue Date: ||22-Aug-2011 |
|Publisher: ||American Institute of Physics|
|Citation: ||Applied physics letters, 22 Aug. 2011, v. 99, 081908, p. 1-3.|
|Abstract: ||Phase change control of ferromagnetism in Ge₀.₉₈Fe₀.₀₂Te thin film prepared by pulsed laser deposition is investigated. The magnetic property of Fe doped phase change material GeTe is found to vary with phase change between amorphous and crystalline states corresponding to the variation of conductance during phase change. The results indicate that a fast control of ferromagnetism by phase change can be realized. The measurement of temperature dependent magnetization shows a long range ferromagnetic interaction in ordered crystalline phase and a short range ferromagnetic interaction in frustrated amorphous phase, which is consistent with phase change.|
|Description: ||DOI: 10.1063/1.3628660|
|Rights: ||© 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in F. Tong, Appl. Phys. Lett. 99, 081908 (2011) and may be found at http://link.aip.org/link/?apl/99/081908|
|Type: ||Journal/Magazine Article|
|ISSN: ||0003-6951 (print)|
|Appears in Collections:||AP Journal/Magazine Articles|
All items in the PolyU Institutional Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
No item in the PolyU IR may be reproduced for commercial or resale purposes.