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Title: Thermal annealing and temperature dependences of memory effect in organic memory transistor
Authors: Ren, X. C.
Wang, S. M.
Leung, C. W.
Yan, Feng
Chan, Paddy K. L.
Subjects: Annealing
Electron traps
Hole traps
Random-access storage
Issue Date: 25-Jul-2011
Publisher: American Institute of Physics
Source: Applied physics letters, 25 July 2011, v. 99, 043303, p. 1-3.
Abstract: We investigate the annealing and thermal effects of organic non-volatile memory with floating silver nanoparticles by real-time transfer curve measurements. During annealing, the memory window shows shrinkage of 23% due to structural variation of the nanoparticles. However, by increasing the device operating temperature from 20 to 90 °C after annealing, the memory window demonstrates an enlargement up to 100%. The differences in the thermal responses are explained and confirmed by the co-existence of electron and hole traps. Our findings provide a better understanding of organic memory performances under various operating temperatures and validate their applications for temperature sensing or thermal memories.
Rights: © 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in X. C. Ren et al, Appl. Phys. Lett. 99, 043303 (2011) and may be found at
Type: Journal/Magazine Article
DOI: 10.1063/1.3617477
ISSN: 0003-6951 (print)
1077-3118 (online)
Appears in Collections:AP Journal/Magazine Articles
ME Journal/Magazine Articles

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