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|Title:||X-ray diffraction and Raman scattering study of SrBi₂Ta₂O[sub 9] ceramics and thin films with Bi₃TiNbO[sub 9] addition|
|Authors:||Zhu, J. S.|
Qin, H. X.
Bao, Z. H.
Cai, W. Y.
Chen, P. P.
Chan, Helen L. W.
Ferroelectric thin films
|Publisher:||American Institute of Physics|
|Source:||Applied physics letters, 3 Dec. 2001, v. 79, no. 23, p.3827-3829|
|Abstract:||Good ferroelectric properties have previously been reported for both the (1-x)SrBi₂Ti₂O[sub 9]-xBi₃TiNbO[sub 9] bulk ceramics and thin films. In this work, x-ray diffraction and Raman scattering were used to investigate the effect of the incorporation of Bi₃TiNbO[sub 9] into SrBi₂Ta₂O[sub 9] bulk ceramics and thin films. A better crystallization, larger grain size and larger displacement of the Ta-O(4) or Ta-O(5) ions are the origin for the good ferroelectric properties of (1-x)SrBi₂Ta₂O[sub 9]-xBi₃TiNbO[sub 9] with x=0.3-0.4.|
|Rights:||© 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J.S. Zhu et al. Appl. Phys. Lett. 79, 3827 (2001) and may be found at http://link.aip.org/link/?apl/79/3827|
|Appears in Collections:||AP Journal/Magazine Articles|
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