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Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/444

Title: Epitaxial growth and planar dielectric properties of compositionally graded (Ba[sub 1-x]Sr[sub x])TiO₃ thin films prepared by pulsed-laser deposition
Authors: Zhu, Xinhua
Chong, Nui
Chan, Helen L. W.
Choy, Chung-loong
Wong, Kin-hung
Liu, Zhiguo
Ming, Naiben
Subjects: Barium compounds
Strontium compounds
Ferroelectric materials
Ferroelectric thin films
Stoichiometry
Pulsed laser deposition
Vapour phase epitaxial growth
Permittivity
Dielectric losses
Rutherford backscattering
Capacitance
Internal stresses
Thin film capacitors
Ferroelectric capacitors
Issue Date: 6-May-2002
Publisher: American Institute of Physics
Citation: Applied physics letters, 6 May 2002, v. 80, no. 18, p.3376-3378
Abstract: We have heteroepitaxially deposited compositionally graded (Ba[1-x]Sr[sub x])TiO₃ (BST) thin films with increasing x from 0.0 to 0.25 on (100)-oriented MgO substrates using pulsed-laser deposition. The compositional gradients along the depth in the graded films were characterized by Rutherford backscattering spectroscopy. By using surface interdigital electrodes, the planar dielectric response of epitaxial graded BST films was measured as a function of frequency, temperature, and dc applied voltage. At room temperature, the dielectric constant of the graded BST film was about 450 with a dielectric loss, tan δ of 0.007 at 100 kHz. Measurements varying the dc bias voltage showed hysteresis of the dielectric response and a tunability of 25% at an applied electric field of 80 kV/cm. The graded BST films undergo a diffuse phase transition with a broad and flat profile of the capacitance versus temperature. Such behavior of the dielectric response in graded BST films is attributed to the presence of the compositional and/or residual strain gradients in the epitaxial graded films. With such a graded structure, it is possible to a build a dielectric thin-film capacitor with a low-temperature dependence of the capacitor over a broad temperature regime.
Rights: © 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in X. Zhu et al. Appl. Phys. Lett. 80, 3376 (2002) and may be found at http://link.aip.org/link/?apl/80/3376
Type: Journal/Magazine Article
URI: http://hdl.handle.net/10397/444
ISSN: 00036951
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AP Journal/Magazine Articles

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