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|Title: ||Ni induced few-layer graphene growth at low temperature by pulsed laser deposition|
|Authors: ||Wang, K.|
Lau, S. P.
Pulsed laser deposition
Transmission electron microscopy
|Issue Date: ||Jun-2011 |
|Publisher: ||American Institute of Physics|
|Citation: ||AIP advances, June 2011, v. 1, no. 2, 022141, p. 1-9.|
|Abstract: ||We have used pulsed laser deposition to fabricate graphene on catalytic nickel thin film at reduced temperature of 650 °C. Non-destructive micro-Raman spectroscopic study on our samples, measuring 1x1 cm² each, has revealed few-layer graphene formation. Bi-, tri-, and few-layer graphene growth has been verified by High Resolution Transmission Electron Microscopy. Our experimental results imply that the number of graphene layers formation relies on film thickness ratios of C to Ni, which can be well controlled by varying the laser ablation time. This simple and low temperature synthesizing method is excellent for graphene based nanotechnology research and device fabrication.|
|Description: ||DOI: 10.1063/1.3602855|
|Rights: ||© 2011 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License.|
|Type: ||Journal/Magazine Article|
|ISSN: ||2158-3226 (online)|
|Appears in Collections:||AP Journal/Magazine Articles|
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