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|Title: ||Enhanced ferroelectric and piezoelectric properties in doped lead-free (Bi₀. ₅Na₀. ₅) ₀. ₉ ₄ Ba₀. ₀ ₆ TiO ₃ thin films|
|Authors: ||Wang, D. Y.|
Chan, N. Y.
Tian, H. Y.
Chan, Helen L. W.
|Issue Date: ||22-Nov-2010 |
|Publisher: ||American Institute of Physics|
|Citation: ||Applied physics letters, 22 Nov. 2010, v. 97, no. 21, 212901, p.1-3.|
|Abstract: ||Doping effects with respect to the electrical properties of morphotropic phase boundary (Bi₀. ₅Na₀. ₅) ₀. ₉ ₄ Ba₀. ₀ ₆ TiO ₃ thin films epitaxially grown on CaRuO ₃ electroded (LaAlO₃) ₀.₃ (Sr₂ AlTaO ₆ ) ₀.₃₅ (001) substrates were investigated. Substantial enhancement of ferroelectricity and piezoelectricity has been achieved in La+Ce codoped films with a remanent polarization P r of 29.5 μC/ cm² and a remanent piezoelectric coefficient d₃₃,[sub f] of 31 pm/V, whereas Mn doping seems more favorite to reduce the leakage current by two order of magnitude. Both doped films exhibited diodelike I-V characteristics, which are correlated with resistance switching effect.|
|Description: ||DOI: 10.1063/1.3518484|
|Rights: ||© 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in D. Y. Wang et al. Appl. Phys. Lett. 97, 212901 (2010) and may be found at http://link.aip.org/link/?apl/97/212901|
|Type: ||Journal/Magazine Article|
|Appears in Collections:||AP Journal/Magazine Articles|
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