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Title: Effect of lattice-misfit strain on the process-induced imprint behavior in epitaxial Pb(Zr₀.₅₂Ti₀.₄₈)O₃thin films
Authors: Wu, Wenbin
Wang, Y.
Pang, Geoffrey Kin-hung
Wong, Kin-hung
Choy, Chung-loong
Subjects: Platinum
Lead compounds
Lanthanum compounds
Strontium compounds
Ferroelectric materials
Ferroelectric thin films
Ferroelectric capacitors
Thin film capacitors
Vacuum deposition
Stress relaxation
Lattice constants
Dielectric hysteresis
Internal stresses
Issue Date: 30-Aug-2004
Publisher: American Institute of Physics
Source: Applied physics letters, 30 Aug. 2004, v. 85, no. 9, p. 1583-1585
Abstract: The effect of lattice-misfit strain on the process-induced imprint behavior in Pb(Zr₀.₅₂Ti₀.₄₈)O₃ (PZT) capacitors with Pt (top), and SrRuO₃, La₀.₇Sr₀.₃MnO₃or LaNiO₃ (bottom) electrodes has been studied. With the different oxide electrodes and by changing the deposition oxygen pressure, various lattice-misfit strains in the epitaxial PZT films have been produced. It was found that after in situ annealing at reduced oxygen pressures, the capacitors showed an increased voltage offset in the polarization-electric field hysteresis loops with increasing the misfit strain, irrelevant to the oxide electrodes employed, while lattice disorder at the bottom interface can effectively eliminate the voltage shift. Our results suggest that the imprint behavior is caused by oxygen loss via dislocations generated by the misfit strain relaxation at the growth temperature.
Rights: © 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in W. Wu et al., Appl. Phys. Lett. 85, 1583 (2004) and may be found at
Type: Journal/Magazine Article
DOI: 10.1063/1.1786662
ISSN: 0003-6951 (print)
1077-3118 (online)
Appears in Collections:AP Journal/Magazine Articles

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