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Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4346

Title: Synthesis and memory effect study of Ge nanocrystals embedded in LaAlO₃ high-k dielectrics
Authors: Lu, X. B.
Lee, Pui-fai
Dai, Jiyan
Subjects: Germanium
Elemental semiconductors
Semiconductor growth
Nanostructured materials
Lanthanum compounds
Dielectric thin films
Pulsed laser deposition
Transmission electron microscopy
Amorphous state
Issue Date: 16-May-2005
Publisher: American Institute of Physics
Citation: Applied physics letters, 16 May 2005, v. 86, no. 20, 203111, p. 1-3
Abstract: A floating gate memory structure utilizing Ge nanocrystals embedded in LaAlO₃ (LAO) high-k dielectric films has been fabricated by pulsed-laser deposition. A cross-sectional high-resolution transmission electron microscopy study revealed that the floating gate structure contains 5-nm-diam spherelike Ge nanocrystals embedded in amorphous LAO. A significant memory effect with a very high density of charge storage up to 2×10¹ ³/cm² in the Ge nanocrystals and a maximum flat band voltage shift of 3.2 V have been achieved for the trilayer structure of LAO(8 nm)/Ge/LAO(3 nm)/Si. The memory structure utilizing the Ge nanocrystals grown in 1 min showed excellent charge retention characteristics, whereas the decay in memory capacitance after 10⁴ s of stress under a flat band voltage was only 8%. These results suggest that this memory structure utilizing Ge nanocrystals embedded in a LAO dielectric offers a high potential for the further scaling of floating gate memory devices. In addition, the effects of Ge growth time, and thus the size and density of the Ge nanocrystals, to the charge storage and charge retention characteristics were also studied.
Description: DOI: 10.1063/1.1926414
Rights: © 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in X. B. Lu, P. F. Lee & J. Y. Dai, Appl. Phys. Lett. 86, 203111 (2005) and may be found at http://apl.aip.org/resource/1/applab/v86/i20/p203111_s1
Type: Journal/Magazine Article
URI: http://hdl.handle.net/10397/4346
ISSN: 0003-6951 (print)
1077-3118 (online)
Appears in Collections:AP Journal/Magazine Articles

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