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|Title:||ZnO-based film bulk acoustic resonator for high sensitivity biosensor applications|
Zhou, X. Y.
Pang, Geoffrey Kin-hung
Liu, W. L.
Cheng, J. G.
Song, Z. T.
Feng, S. L.
Lai, L. H.
Chen, J. Z.
Wide band gap semiconductors
Semiconductor thin films
Thin film sensors
Bulk acoustic wave devices
Transmission electron microscopy
|Publisher:||American Institute of Physics|
|Source:||Applied physics letters, 2 Apr. 2007, v. 90, no. 14, 143503, p. 1-3|
|Abstract:||Zinc oxide (ZnO)-based film bulk acoustic resonator consisting of a piezoelectric element (Au/ZnO/Pt) and a Bragg reflector (ZnO/Pt multilayer structure) has been fabricated by magnetron sputtering. The transmission electron microscopy and x-ray diffraction measurements revealed that all thin film layers in the device were well crystallized and highly textured. By electrical measurements, it was found that the device had a high resonant frequency (3.94 GHz) and mass sensitivity (8970 Hz cm²/ng). The use of the device as a biosensor was demonstrated by comparing the resonant properties of the device with/without coatings of biospecies.|
|Rights:||© 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Z. Yan et al., Appl. Phys. Lett. 90, 143503 (2007) and may be found at http://apl.aip.org/resource/1/applab/v90/i14/p143503_s1|
|Appears in Collections:||AP Journal/Magazine Articles|
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