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|Title: ||Epitaxial growth of SrTiO₃ thin film on Si by laser molecular beam epitaxy|
|Authors: ||Zhou, Xiaoyuan|
Chan, Helen L. W.
|Subjects: ||Molecular beam epitaxial growth|
Laser materials processing
Transmission electron microscopy
|Issue Date: ||3-Jan-2007 |
|Publisher: ||American Institute of Physics|
|Citation: ||Applied physics letters, 3 Jan. 2007, v. 90, 012902, p. 1-3|
|Abstract: ||SrTiO₃ thin films have been deposited on Si (001) wafers by laser molecular beam epitaxy using an ultrathin Sr layer as the template. X-ray diffraction measurements indicated that SrTiO₃ was well crystallized and epitaxially aligned with Si. Cross-sectional observations in a transmission electron microscope revealed that the SrTiO₃/Si interface was sharp, smooth, and fully crystallized. The thickness of the Sr template was found to be a critical factor that influenced the quality of SrTiO₃ and the interfacial structure. Electrical measurements revealed that the SrTiO₃ film was highly resistive.|
|Rights: ||© 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in X.Y. Zhou et al. Appl. Phys. Lett. 90, 12902 (2007) and may be found at http://link.aip.org/link/?apl/90/12902|
|Type: ||Journal/Magazine Article|
|Appears in Collections:||AP Journal/Magazine Articles|
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