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|Title:||Effect of CaRuO₃ interlayer on the dielectric properties of Ba(Zr,Ti)O₃ thin films prepared by pulsed laser deposition|
Chan, Helen L. W.
Dielectric thin films
Pulsed laser deposition
|Publisher:||American Institute of Physics|
|Source:||Applied physics letters, 5 Oct. 2006, v. 89, 142911, p. 1-3|
|Abstract:||Ba(Zr[sub 0.2]Ti[sub 0.8])O₃ (BZT) thin films on Pt(111)/Ti/SiO₂/Si(100) substrates without and with CaRuO₃ (CRO) buffer layer were fabricated at 650 °C in situ by pulsed laser deposition. The BZT thin films showed a dense morphology, many clusters are found on the surface images of BZT/Pt films, which are composed by nanosized grains of 25-35 nm; the average grain size of BZT/CRO films is about 80 nm, which lager than that of BZT/Pt thin film. The dielectric constants and dissipation factors of BZT/Pt and BZT/CRO thin films were 392 and 0.019 and 479 and 0.021 at 1 MHz, respectively. The dielectric constant of BZT/Pt and BZT/CRO thin films changes significantly with applied dc bias field and has high tunabilities and figures of merit of ~70% and 37 and 75% and 36, respectively, under an applied field of 400 kV/cm. The possible microstructural background responsible for the high dielectric constant and tunability was discussed.|
|Rights:||© 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in X.G. Tang et al. Appl. Phys. Lett. 89, 142911 (2006)) and may be found http://link.aip.org/link/?apl/89/142911|
|Appears in Collections:||MRC Journal/Magazine Articles|
AP Journal/Magazine Articles
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