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Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/429

Title: Enhanced in-plane ferroelectricity in Ba[sub 0.7]Sr[sub 0.3]TiO₃ thin films grown on MgO (001) single-crystal substrate
Authors: Wang, Danyang
Wang, Yu
Zhou, Xiaoyuan
Chan, Helen L. W.
Choy, Chung-loong
Subjects: Barium compounds
Strontium compounds
Ferroelectric thin films
Ferroelectric ceramics
Pulsed laser deposition
X-ray diffraction
Internal stresses
Dielectric hysteresis
Ferroelectric Curie temperature
Issue Date: 17-May-2005
Publisher: American Institute of Physics
Citation: Applied physics letters, 17 May 2005, v. 86, 212904, p. 1-3
Abstract: Highly oriented Ba[sub 0.7]Sr[sub 0.3]TiO₃ thin films were grown on MgO (001) single-crystal substrate using pulsed-laser deposition and the in-plane ferroelectric properties of the film were evaluated. X-ray diffraction characterization revealed a good crystallinity and tensile in-plane stress in the film. A well-defined ferroelectric hysteresis loop with P[sub r]=9.5 µC/cm² was observed along the (100) direction, which implied an enhanced in-plane ferroelectricity in the Ba[sub 0.7]Sr[sub 0.3]TiO₃ thin film in comparison with the Ba[sub 0.7]Sr[sub 0.3]TiO₃ ceramics. Curie temperature of the film was found to be ~88 °C, which is nearly 50 °C higher than that of the Ba[sub 0.7]Sr[sub 0.3]TiO₃ ceramics. The butterfly-shaped C-V characteristic curve also evidenced the enhanced in-plane ferroelectric property in the film, and a large dielectric tunability of 69% was found at 1 MHz under a moderate dc bias field. The observation of enhanced ferroelectricity along the in-plane direction in the highly oriented Ba[sub 0.7]Sr[sub 0.3]TiO₃ thin film was explained in terms of the increased tetragonality (a/c =1.016) induced by the lattice misfit strain.
Rights: © 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in D.Y. Wang et al. Appl. Phys. Lett. 86, 212904 (2005) and may be found at http://link.aip.org/link/?apl/86/212904
Type: Journal/Magazine Article
URI: http://hdl.handle.net/10397/429
ISSN: 00036951
Appears in Collections:MRC Journal/Magazine Articles
AP Journal/Magazine Articles

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