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|Title: ||Self-organized Ge nanocrystals embedded in HfAlO fabricated by pulsed-laser deposition and application to floating gate memory|
|Authors: ||Liu, W. L.|
Lee, P. F.
Chan, Helen L. W.
Song, Z. T.
Feng, S. L.
|Issue Date: ||28-Dec-2004 |
|Publisher: ||American Institute of Physics|
|Citation: ||Applied physics letters, 28 Dec. 2004, v. 86, 013110, p. 1-3|
|Abstract: ||A trilayer metal-oxide-semiconductor structure containing a HfAlO tunnel layer, isolated Ge nanocrystals, and a HfAlO control layer, was obtained using pulsed-laser deposition (PLD). Self-organized Ge nanocrystals were formed by PLD at 600 °C, suggesting a useful low-temperature process for fabricating Ge nanocrystals embedded in dielectric materials. The self-organized Ge nanocrystals so formed were uniform in size and distribution with a density approaching 10¹² cmˉ². The effects of deposition temperature and growth rate in forming Ge
nanocrystals were investigated and it was revealed that a relatively low temperature and growth rate are favorable for the formation of Ge nanocrystals. The memory effect of the Ge nanocrystals with storage charge density of up to 10¹² cmˉ² has been demonstrated by the presence of hysteresis in the capacitance-voltage curves.|
|Rights: ||© 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in W.L. Lui et al. Appl. Phys. Lett. 86, 13110 (2005) and may be found at http://link.aip.org/link/?apl/86/13110|
|Type: ||Journal/Magazine Article|
|Appears in Collections:||AP Journal/Magazine Articles|
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