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Title: Structural and optical properties of wurtzite Mg[sub x]Zn[sub 1-x]S(≤x≤0.25) films grown on (0001) Al₂O₃ by pulsed-laser deposition
Authors: Ong, H. C.
Dai, Jiyan
Subjects: Magnesium compounds
Zinc compounds
II-VI semiconductors
Pulsed laser deposition
Semiconductor epitaxial layers
Transmission electron microscopy
Energy gap
Visible spectra
Infrared spectra
Semiconductor growth
Issue Date: 19-Aug-2002
Publisher: American Institute of Physics
Source: Applied physics letters, 19 Aug. 2002, v. 81, no. 8, p. 1444-1446.
Abstract: Wurtzite Mg[sub x]Zn[sub 1-x]S(≤x≤0.25) thin films have been epitaxially grown on (0001) Al₂O₃ using pulsed-laser deposition. High-quality films can be prepared at a growth temperature of 450–550 °C with (0001) ω-rocking curve full width at half maximum as narrow as 0.09°. High-resolution cross-sectional transmission electron microscopy of the films deposited at 500 °C shows the presence of the mixture of zinc-blende and wurtzite phases at the interface, and therefore the interfacial region is highly defective. However, above the critical thickness of ∼5 nm, the film bulk consists of pure wurtzite material with a very high level of crystallinity. The band edge of Mg[sub x]Zn[sub 1-x]S films examined by transmission spectroscopy at room temperature increases from 3.75 eV at x = 0 to 3.95 at x = 0.25.
Rights: © 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in H. C. Ong & J. Y. Dai, Appl. Phys. Lett. 81, 1444 (2002) and may be found at
Type: Journal/Magazine Article
DOI: 10.1063/1.1502191
ISSN: 0003-6951 (print)
1077-3118 (online)
Appears in Collections:AP Journal/Magazine Articles

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