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|Title: ||Study on the crystallization by an electrical resistance measurement in Ge₂Sb₂Te₅ and N-doped Ge₂Sb₂Te₅ films|
|Authors: ||Hu, D. Z.|
Lu, X. M.
Zhu, J. S.
Metallic thin films
|Issue Date: ||1-Dec-2007 |
|Publisher: ||American Institute of Physics|
|Citation: ||Journal of applied physics, 1 Dec. 2007, v. 102, no. 11, 113507, p. 1-4.|
|Abstract: ||An electric resistance measurement was used to study the crystallization process of Ge₂Sb₂Te₅ (GST) and N-doped Ge₂Sb₂Te₅ (N-GST) films. The relation between onductivity and annealing time was investigated and the crystallization parameters were determined directly by resistance measurement during isothermal crystallization process in the amorphous GST and the N-GST films. The results show that the crystallization processes in both GST and N-GST films are layer by layer. Their conductivities satisfy the equation σ = σc−(σc−σa)exp(−ktⁿ), at t>r , where r is a temperature-dependent time in the process of crystallization. The activation energy for crystallization of amorphous GST films was 2.11±0.18 eV and the Avrami coefficient was between 2 to 4, in close agreement with previous studies using different techniques. After N doping the
Avrami coefficient decreased, while the activation energy increased. The formation of a strain induced by the distortion of unit cell after N doping was used to explain the observed results.|
|Description: ||DOI: 10.1063/1.2818104|
|Rights: ||© 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in D. Z. Hu et al., J. Appl. Phys. 102, 113507 (2007) and may be found at http://link.aip.org/link/?jap/102/113507.|
|Type: ||Journal/Magazine Article|
|ISSN: ||0021-8979 (print)|
|Appears in Collections:||AP Journal/Magazine Articles|
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