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Title: Spectroscopic ellipsometry study of epitaxially grown Pb(Mg₁/₃Nb₂/₃)O₃–PbTiO₃/MgO/TiN/Si heterostructures
Authors: Tsang, W. S.
Chan, K. Y.
Mak, Chee-leung
Wong, Kin-hung
Subjects: Lead compounds
Magnesium compounds
Titanium compounds
Ferroelectric thin films
Epitaxial layers
Pulsed laser deposition
Vapour phase epitaxial growth
Surface morphology
Interface structure
X-ray diffraction
Scanning electron microscopy
Refractive index
Issue Date: 25-Aug-2003
Publisher: American Institute of Physics
Source: Applied physics letters, 25 Aug. 2003, v. 83, no. 8, p. 1599-1601.
Abstract: 0.65Pb(Mg₁/₃Nb₂/₃)O₃–0.35PbTiO₃(PMN–PT) thin films have been grown on MgO/TiN-buffered Si(001) substrates using pulsed laser deposition. Their structural properties and surface morphology were examined by x-ray diffraction and scanning electron microscopy, respectively. All PMN–PT films grown at 670 °C show a cube-on-cube epitaxial relationship of PMN–PT(100)∥MgO(100)∥TiN(100)∥Si(100). Discernable interfaces between layers in the heterostructures and crack-free surfaces are evident. A spectroscopic ellipsometer was used to study the optical characteristics of the films. It was revealed that the refractive index of the PMN–PT is ∼2.50 as measured at 635 nm. This value is only slightly less than that of the PMN–PT single crystal of 2.60. Our results suggest that the PMN–PT/MgO/TiN/Si heterostructure has an excellent potential for use in integrated optical waveguide devices.
Rights: © 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in W. S. Tsang, K. Y. Chan & C. L. Mak, Appl. Phys. Lett. 83, 1599 (2003) and may be found at
Type: Journal/Magazine Article
DOI: 10.1063/1.1603339
ISSN: 0003-6951 (print)
1077-3118 (online)
Appears in Collections:AP Journal/Magazine Articles

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