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|Title: ||Spectroscopic ellipsometry study of epitaxially grown Pb(Mg₁/₃Nb₂/₃)O₃–PbTiO₃/MgO/TiN/Si heterostructures|
|Authors: ||Tsang, W. S.|
Chan, K. Y.
|Subjects: ||Lead compounds|
Ferroelectric thin films
Pulsed laser deposition
Vapour phase epitaxial growth
Scanning electron microscopy
|Issue Date: ||25-Aug-2003 |
|Publisher: ||American Institute of Physics|
|Citation: ||Applied physics letters, 25 Aug. 2003, v. 83, no. 8, p. 1599-1601.|
|Abstract: ||0.65Pb(Mg₁/₃Nb₂/₃)O₃–0.35PbTiO₃(PMN–PT) thin films have been grown on MgO/TiN-buffered Si(001) substrates using pulsed laser deposition. Their structural properties and surface morphology were examined by x-ray diffraction and scanning electron microscopy, respectively. All PMN–PT films grown at 670 °C show a cube-on-cube epitaxial relationship of PMN–PT(100)∥MgO(100)∥TiN(100)∥Si(100). Discernable interfaces between layers in the heterostructures and crack-free surfaces are evident. A spectroscopic ellipsometer was used to study the optical characteristics of the films. It was revealed that the refractive index of the PMN–PT is ∼2.50 as measured at 635 nm. This value is only slightly less than that of the PMN–PT single crystal of 2.60. Our results suggest that the PMN–PT/MgO/TiN/Si heterostructure has an excellent potential for use in integrated optical waveguide devices.|
|Description: ||DOI: 10.1063/1.1603339|
|Rights: ||© 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in W. S. Tsang, K. Y. Chan & C. L. Mak, Appl. Phys. Lett. 83, 1599 (2003) and may be found at http://apl.aip.org/resource/1/applab/v83/i8/p1599_s1|
|Type: ||Journal/Magazine Article|
|ISSN: ||0003-6951 (print)|
|Appears in Collections:||AP Journal/Magazine Articles|
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