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Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4222

Title: Simulation of oxygen vacancy induced phenomena in ferroelectric thin films
Authors: Li, Kwok-tung
Lo, Veng-cheong
Subjects: Lead compounds
Ferroelectric thin films
Potts model
Dielectric polarisation
Dielectric hysteresis
Electron traps
Hole traps
Space charge
Ferroelectric switching
Vacancies (crystal)
Issue Date: 1-Feb-2005
Publisher: American Institute of Physics
Citation: Journal of applied physics, 1 Feb. 2005, v. 97, no. 3, 034107, p. 1-8.
Abstract: The role of oxygen vacancy in lead–titanate–zirconate ferroelectric thin film has been numerically simulated using the two-dimensional four-state Potts model. On one hand, the presence of an oxygen vacancy in a perovskite cell strongly influences the displacement of the Ti⁴⁺ion. Hence the vacancy–dipole coupling must be considered in the switching mechanism. On the other hand, a space charge layer is established by the inhomogeneous distribution of oxygen vacancies through trapping charge carriers. Consequently, the thickness dependence of the coercive field and remanent polarization are reproduced in the presence of this oxygen vacancy distribution. Frequency, temperature, and driving voltage-dependent polarization fatigue behaviors are also simulated.
Description: DOI: 10.1063/1.1846947
Rights: © 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in K. T. Li & V. C. Lo, J. Appl. Phys. 97, 034107 (2005) and may be found at http://link.aip.org/link/?jap/97/034107.
Type: Journal/Magazine Article
URI: http://hdl.handle.net/10397/4222
ISSN: 0021-8979 (print)
1089-7550 (online)
Appears in Collections:AP Journal/Magazine Articles

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