Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4221
Title: Simulation of thickness effect in thin ferroelectric films using Landau-Khalatnikov theory
Authors: Lo, Veng-cheong
Subjects: Ferroelectric thin films
Dielectric hysteresis
Dielectric polarisation
Issue Date: 1-Sep-2003
Publisher: American Institute of Physics
Source: Journal of applied physics, 1 Sept. 2003, v. 94, no. 5, p. 3353-3359.
Abstract: The thickness effect in ferroelectric thin films has been theoretically investigated using the Landau–Khalatnikov theory. Ferroelectric properties such as the hysteresis loop, and its associated coercive field and the remanent polarization of various film thicknesses have been numerically simulated. In this simulation, the thin film was modeled by the stacking of layers, each of which has unique parameters for the Landau free energy. Due to the interfacial effects near the electrodes, the parameters for the surface layers are different from those for the bulk. The simulated result shows that the coercive field decreases while the remanent polarization increases with thickness. Both of these trends qualitatively agree with experiments.
Rights: © 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in V. C. Lo, J. Appl. Phys. 94, 3353 (2003) and may be found at http://link.aip.org/link/?jap/94/3353.
Type: Journal/Magazine Article
URI: http://hdl.handle.net/10397/4221
DOI: 10.1063/1.1598275
ISSN: 0021-8979 (print)
1089-7550 (online)
Appears in Collections:AP Journal/Magazine Articles

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