PolyU IR
 

PolyU Institutional Repository >
Electronic and Information Engineering >
EIE Journal/Magazine Articles >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4219

Title: The effects of interdiffusion on the subbands in GaₓIn₁₋ₓN₀.₀₄As₀.₉₆/GaAs quantum well for 1.3 and 1.55 μm operation wavelengths
Authors: Chan, Michael C. Y.
Surya, Charles
Wai, Ping-kong Alexander
Subjects: Chemical interdiffusion
III-V semiconductors
Gallium compounds
Gallium arsenide
Indium compounds
Quantum well lasers
Internal stresses
Interface states
Spectral line shift
Valence bands
Issue Date: 1-Jul-2001
Publisher: American Institute of Physics
Citation: Journal of applied physics, 1 July 2001, v. 90, no. 1, p. 197-201.
Abstract: The interdiffusion of GaₓIn₁₋ₓN₀.₀₄As₀.₉₆/GaAs single quantum well (QW) structure with well width of 6 nm is studied theoretically. The as-grown Ga concentration in the QW is chosen to be 0.7 and 0.6 for the operation wavelengths of 1.3 and 1.55 μm, respectively. We studied the effects of interdiffusion on the in-plane strain, confinement potential, and subband energy levels of the QW using Fick’s law. The diffusion coefficients of both the well and barrier layers are assumed to be constant. The effects of valence band mixing and strains are included in the calculation of the electron and hole subband structures. We find that the group-III interdiffusion effects can result in blueshifts of 123 and 211 nm in the GaₓIn₁₋ₓN₀.₀₄As₀.₉₆/GaAs QW at operation wavelength of 1.3 μm (x=0.7) and 1.55 μm (x=0.6), respectively. Our results show that interdiffusion technique can be used to tune the operating wavelengths of GaInAsN/GaAs lasers for multiwavelength applications such as in the sources of dense wavelength division multiplexed optical communication systems.
Description: DOI: 10.1063/1.1370110
Rights: © 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in M. C. Y. Chan, C. Surya & P. K. A. Wai, J. Appl. Phys. 90, 197 (2001) and may be found at http://link.aip.org/link/?jap/90/197.
Type: Journal/Magazine Article
URI: http://hdl.handle.net/10397/4219
ISSN: 0021-8979 (print)
1089-7550 (online)
Appears in Collections:EIE Journal/Magazine Articles

Files in This Item:

File Description SizeFormat
Chan_Effects_interdiffusion_subbands.pdf79.14 kBAdobe PDFView/Open



Facebook Facebook del.icio.us del.icio.us LinkedIn LinkedIn


All items in the PolyU Institutional Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
No item in the PolyU IR may be reproduced for commercial or resale purposes.

 

© Pao Yue-kong Library, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
Powered by DSpace (Version 1.5.2)  © MIT and HP
Feedback | Privacy Policy Statement | Copyright & Restrictions - Feedback