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Title: Selective growth of (100)-, (110)-, and (111)-oriented MgO films on Si(100) by pulsed laser deposition
Authors: Chen, X. Y.
Wong, Kin-hung
Mak, Chee-leung
Yin, X. B.
Wang, M.
Liu, Jun-Ming
Liu, Zhiguo
Subjects: Magnesium compounds
Insulating thin films
Pulsed laser deposition
Crystal microstructure
Issue Date: 1-May-2002
Publisher: American Institute of Physics
Source: Journal of applied physics, 1 May 2002, v. 91, no. 9, p. 5728-5734.
Abstract: Selective growth of singly oriented (110)-, (100)-, and (111)-MgO films on Si(100)substrates were obtained by pulsed laser deposition. The effects of deposition temperature, ambient oxygen pressure, and etching of the substrate on the structural properties of the films were studied. It is found that the crystalline orientations of the MgO films are determined at the initial deposition stage by the substrate temperature only. The ambient pressure during deposition and etching of the Si substrates only effect the crystalline quality. Both (110)- and (111)-oriented films show granular grain structures. The (100)-oriented films grown on etched Si substrates display similar granular structures. Those deposited on nonetched Si substrates, however, reveal distinctive columnar grains. The observed phenomena are discussed based on the theory of crystal growth. The mechanism of the orientation selection is attributed to the energy balance between the surface and the interface energies. The varied grain structures are explained by considering the mobility of adatoms in different situations.
Rights: © 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in X. Y. Chen et al., J. Appl. Phys. 91, 5728 (2002) and may be found at
Type: Journal/Magazine Article
DOI: 10.1063/1.1461059
ISSN: 0021-8979 (print)
1089-7550 (online)
Appears in Collections:AP Journal/Magazine Articles

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