PolyU IR
 

PolyU Institutional Repository >
Applied Physics >
AP Journal/Magazine Articles >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4213

Title: A possible mechanism of anomalous shift and asymmetric hysteresis behavior of ferroelectric thin films
Authors: Wong, C. K.
Shin, Franklin G.
Subjects: Ferroelectric thin films
Permittivity
Dielectric hysteresis
Dielectric polarisation
Deformation
Electrical conductivity
Issue Date: 24-Jan-2005
Publisher: American Institute of Physics
Citation: Applied physics letters, 24 Jan. 2005, v. 86, no. 4, 042901, p.1-3.
Abstract: We studied theoretically the hysteresis behavior of ferroelectric thin films. The anomalous ferroelectric response is discussed by use of a bilayer model. Electrical conductivities of the films have been taken into account. To model the effects of the inhomogeneity of polarization and permittivity across the interface, the film is assumed to possess a secondary dielectric∕ferroelectric phase (a dead or passive layer) with asymmetric conductivity. This configuration is found to produce large shifting (along the field axis) and deformation of the measured hysteresis loop. This is a manifestation of the asymmetric conductivity of the material. Theoretical calculation based on this model shows that the observed phenomena of shifted and skewed hysteresis loop in ferroelectric thin films can be explained in this way.
Description: DOI: 10.1063/1.1853520
Rights: © 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in C. K. Wong & F. G. Shin, Appl. Phys. Lett. 86, 042901 (2005) and may be found at http://apl.aip.org/resource/1/applab/v86/i4/p042901_s1
Type: Journal/Magazine Article
URI: http://hdl.handle.net/10397/4213
ISSN: 0003-6951 (print)
1077-3118 (online)
Appears in Collections:AP Journal/Magazine Articles

Files in This Item:

File Description SizeFormat
Wong_Ferroelectric_Thin_Films.pdf65.78 kBAdobe PDFView/Open



Facebook Facebook del.icio.us del.icio.us LinkedIn LinkedIn


All items in the PolyU Institutional Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
No item in the PolyU IR may be reproduced for commercial or resale purposes.

 

© Pao Yue-kong Library, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
Powered by DSpace (Version 1.5.2)  © MIT and HP
Feedback | Privacy Policy Statement | Copyright & Restrictions - Feedback