Spacerless metal-manganite pseudo-spin-valve structure

Abstract

We fabricated pseudo-spin-valves by using La₀.₇Sr₀.₃MnO₃and Co₃₃Fe₆₇ as ferromagnetic electrodes. A natural interface layer present between metal and manganite layers eliminated the need of depositing any nonmagnetic spacers. The magnetic layers were decoupled from each other, and the structure exhibited a positive magnetoresistive behavior. Direct comparison between magnetic and transport measurements concluded the occurrence of giant magnetoresistive effect in such a spacerless metal-oxide pseudo-spin-valve structure. The results have implications for a simple route to fabricate oxide-based spintronic devices.