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|Title:||Universal time relaxation behavior of the exchange bias in ferromagnetic/antiferromagnetic bilayers|
Leung, Dennis Chi-wah
Blamire, M. G.
|Subjects:||Exchange interactions (electron)|
Magnetic epitaxial layers
|Publisher:||American Institute of Physics|
|Source:||Journal of applied physics, 1 Feb. 2006, v. 99, no. 3, 033910, p. 1-5.|
|Abstract:||The resilience of the exchange bias (Hₑₓ) in ferromagnet/antiferromagnet bilayers is generally studied in terms of repeated hysteresis loop cycling or by protracted annealing under reversed field (training and long-term relaxation, respectively). In this paper we report measurements of training and relaxation in NiFe films coupled with polycrystalline FeMn and epitaxial α-Fe₂O₃. We show that Hₑₓ suppressed both by training and relaxation was partially recovered as soon as a field cycling for consecutive hysteresis loop measurement was stopped or the magnetization of the ferromagnet was switched back to the biased direction. In both cases we can model the observed logarithmic time relaxation behavior, and its film thickness and temperature dependence, in terms of a thermally activated reversal of the antiferromagnetic domain configuration to reduce the total magnetic energy.|
|Rights:||© 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Dho, C. W. Leung & M. G. Blamire, J. Appl. Phys. 99, 033910 (2006) and may be found at http://link.aip.org/link/?jap/99/033910.|
|Appears in Collections:||AP Journal/Magazine Articles|
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