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|Title: ||Studies of electronic structure of ZnO grain boundary and its proximity by using spatially resolved electron energy loss spectroscopy|
|Authors: ||Ong, H. C.|
Du, G. T.
|Subjects: ||Zinc compounds|
Semiconductor thin films
Electron energy loss spectra
Spectral line shift
|Issue Date: ||8-Jul-2002 |
|Publisher: ||American Institute of Physics|
|Citation: ||Applied physics letters, 8 July 2002, v. 81, no. 2, p. 277-279.|
|Abstract: ||The low electron energy loss and complex dielectric functions of an arbitrary grain boundary and its proximity in ZnO thin films have been studied by using the spatially resolved electron energy loss spectroscopy. The critical point parameters have been determined by fitting the dielectric functions simultaneously with analytical line shape model. Gradual changes have been observed in the dielectric functions spectra. The critical points are found to redshift and then blueshift when the electron beam scanned across the grain boundary, which suggest the distinctive electronic structure not only of the grain boundary but also of the depletion region. In addition, comparison has been made between the experiment and the recent theoretical studies to account for the interband transitions that occur in the grain boundaries. Several features predicted by the theory are qualitatively found to be consistent with our results. The presence of dangling bonds instead of bond distortion is attributed to be the major cause of defects in the grain boundaries of ZnO.|
|Description: ||DOI: 10.1063/1.1489721|
|Rights: ||© 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in H. C. Ong, J. Y. Dai & G. T. Du, Appl. Phys. Lett. 81, 277 (2002) and may be found at http://apl.aip.org/resource/1/applab/v81/i2/p277_s1|
|Type: ||Journal/Magazine Article|
|ISSN: ||0003-6951 (print)|
|Appears in Collections:||AP Journal/Magazine Articles|
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